Manpower Details

Designation: Scientist D
Emp ID: 2059
Work Place: Hyderabad Laboratory
Specialisation:

Symposia / Conferences

  1. Silicon Carbide (SiC) Single Crystal Bulk Growth and Challenges -
    Sandeep Mahajan, M. V. Rokade, S. T. Ali, Arbind Kumar, N. R. Munirathnam,  S. Deb, D. V. Sridhara Rao, L. Durai, B. Srivathsa, P. K. Sahu, S. Saha,  V. V. Bhanuprasad, O. P. Thakur and A. K. Garg
    International Conference of Young Researchers on Advanced materials (IUMRS-ICYRAM 2016)

  2. Silicon Carbide (SiC) single crystal for electronic applications – sublimation growth and challenges-
    S. T. Ali, Sandeep Mahajan, M. V. Rokade, N. R. Munirathnam, S. Deb, D. V. SridharaRao, L. Durai, V. V. Bhanuprasad and A. K. Garg;
    International symposium on Semiconductor Materials and Devices (ISSMD-3) held at Anna University during 2-5 Fe, 2015.

  3. Silicon Carbide (SiC) for next generation electronic innovations - Single Crystal  bulk growth and challenges;
    18th International workshop on Physics of semiconductor devices (IWPSD) organized by Materials Research Society of India (MRSI) – 2015 held at IISC Bangalore during  December 07-10, 2015;
    Sandeep Mahajan, M. V. Rokade, S. T. Ali, N. R. Munirathnam, S. Deb, D. V. Sridhara Rao, L. Durai, V. V. Bhanuprasad and A. K. Garg

  4.  Growth of 2″ Silicon Carbide (SIC) Single Crystal – Unique Wide Band Gap Semiconductor for  Advanced Electronic Applications;
    Third International Symposium on Semiconductor Materials and Devices” (ISSMD-3) held at Anna University during 02-05 February, 2015;
    S. T. Ali, Sandeep Mahajan, M. V. Rokade, N. R. Munirathnam, S. Deb, D. V. Sridhara Rao, M. Vijaya Kumar and A. K. Garg

  5. Silicon Carbide (SiC) Single Crystal Growth by Physical Vapor Transport and Challenges; 
    26th Annual General Meeting of Materials Research Society of India (MRSI) – 2015 held at Jaipur during  February 09-11, 2015;
    Sandeep Mahajan, M. V. Rokade, S. T. Ali, N. R. Munirathnam, S. Deb, D. V. Sridhara Rao, M. Vijaya Kumar and A. K. Garg

  6. Silicon Carbide (SiC), a WBG semiconductor for electronic applications, single crystals bulk growth and characterization;
    19th National Seminar on Crystal Growth” held at VIT University during 12-14th March 2015;
    S. T. Ali, Sandeep Mahajan, M. V. Rokade, N. R. Munirathnam, S. Deb, D. V. Sridhara Rao, L. Dirai, V. V. Bhanuprasad and A. K. Garg

  7. Characterization of Silicon Carbide (SiC) single crystal grown by vapor phase transport (PVT) technique;
    Third International Symposium on Semiconductor Materials and Devices” (ISSMD-3) held at Anna University during 02-05 February, 2015;
    M. V. Rokade, Sandeep Mahajan, S. T. Ali,  N. R. Munirathnam, S. Deb, D. V. Sridhara Rao, M. Vijaya Kumar and A. K. Garg

  8. "Characterization of Silicon Carbide (SiC) single crystal grown by vapor phase transport (PVT) technique";
    Third International Symposium on Semiconductor Materials and Devices” (ISSMD-3) held at Anna University during 02-05 February, 2015;
    M. V. Rokade, Sandeep Mahajan, S. T. Ali,  N. R. Munirathnam, S. Deb, D. V. Sridhara Rao, M. Vijaya Kumar and A. K. Garg

  9. Growth of 2″ Silicon Carbide (SiC) Single Crystal – Unique Wide Band Gap Semiconductor for Advance Electronic Application-
    Sandeep Mahajan, M. V. Rokade, S. T. Ali, N. R. Munirathnam, S. Deb, D. V. Sridhararao, M. Vijayakumar and A. K. Garg;
    25th MRSI Conference held at IISC Bangalore during 12-14 Feb, 2014.

  10.  Silicon Carbide (SiC) single crystal: A futuristic material; All India Seminar on “Emerging technologies in Material Science and Engineering held at Institute of Aeronautical Engineering Dundigal, Hyderabad during 18-03-2014 to 19-03-2014.
    Sandeep Mahajan, M. V. Rokade, S. T. Ali,  N. R. Munirathnam

  11. Growth of 2” Silicon carbide (SiC) Single Crystal – Unique Wide Band Gap Semiconductor for Advanced Electronic Appliction; 25th Annual General Meeting of Materials Research Society of India (MRSI) – 2014 held at IISC Bangalore from 12-02-2014 to 14-02-2014.
    Sandeep Mahajan, M. V. Rokade, S. T. Ali,  N. R. Munirathnam, S. Deb, D. V. Sridhara Rao, M. Vijaya Kumar and A. K. Garg;

Journals

  1. Investigation of conduction and relaxation phenomena in BaZrxTi1−xO3 (x=0.05) by impedance spectroscopy -
    Sandeep Mahajan, Divya Haridas, S.T. Ali, N.R. Munirathnam, K. Sreenivas, O.P. Thakur, Chandra Prakash;
    Physica B Condensed Matter 10 (2014) 114

  2. Investigation of micropipe and defects in molten KOH etching of 6H - n-silicon carbide (SiC) single crystal” -
    Sandeep Mahajan, M. V. Rokade, S. T. Ali, K. Srinivasa Rao, N. R. Munirathnam, T. L. Prakash, D. P. Amalnerkar;
    Materials Letters 101 (2013) 72–75

  3. Investigation of micropipe and defects in molten KOH etching of 6H n-Silicon Carbide (SiC) Single Crystal; Sandeep Mahajan, M. V. Rokade, S. T. Ali, K. Srinivasa Rao, N. R. Munirathnam, T. L. Prakash and D. P. Amalnerkar; Materials Letters 101(2013) 72-75.  DOI 10.1016/j.matlet 2013.03.079

  4. Investigation of micropipe and defects in molten KOH etching of 6H n-silicon carbide (SiC) single crystal; Sandeep Mahajan, M.V. Rokade, S.T. Ali, K. Srinivasa rao, N.R. Munirathnam, T.L. Prakash and D.P. Amalnerkar; Materials Letters, 101 (2013) 72-75.

  5. Study of Structural and Electrical Properties of Conventional Furnace and Microwave-Sintered BaZr0.10Ti0.90O3 Ceramics –
    Sandeep Mahajan, O.P. Thakur, D.K. Bhattacharya, K. Sreenivas;
    Journal of American Ceramic Soc 92(2009) 416.