SiC

Full Title: 

"Characterization of Silicon Carbide (SiC) single crystal grown by vapor phase transport (PVT) technique";
Third International Symposium on Semiconductor Materials and Devices” (ISSMD-3) held at Anna University during 02-05 February, 2015;
M. V. Rokade, Sandeep Mahajan, S. T. Ali,  N. R. Munirathnam, S. Deb, D. V. Sridhara Rao, M. Vijaya Kumar and A. K. Garg

Location: 
Hyderabad Laboratory
Year: 
2015
Publication Type: 
Symposia / Conferences
Research Area: