C-MET, Hyderabad is focused on the development of process technology for 7N pure cadmium (Cd), Tellurium (Te), Zinc (Zn) and 4N Germanium (Ge) purification and it is one of the major activities of the recent times. The high pure (7N grade) Te and Cd are the major constitutes in cadmium telluride (CdTe), cadmium zinc telluride (CdZnTe), mercury cadmium telluride (HgCdTe), etc., which are used in various opto-electronic applications such as solar cells, IR detectors, imaging devices, electro-optic modulators, fluorescence, etc. CdTe and CdZnTe substrates are used for growing epi-layers for Focal Plane Arrays (FPAs), whose major applications are in night vision cameras and thermal imaging devices in the kilometers range, predominantly used by army during night time operations.
C-MET has also been engaged in the growth of 2” SiC single crystal boules using physical vapor transport technique and grown 4H and 6H SiC single crystals first time in the country. The project is addressing the need for the technologically important wide band gap semiconductor for advance electronics application (high power, high frequency and high temperature). In house grown and further processed device grade SiC single crystal wafers will be used for RF device fabrication, high temperature (> 650 ˚C) gas sensors, solid-state transducers such as pressure sensors & accelerometers for automotive and space industry using micro-electromechanical systems (MEMS) in collaboration with user agencies and other R&D institutes.