SiC
Growth of 2″ Silicon Carbide (SiC) Single Crystal – Unique Wide Band Gap Semiconductor for Advance Electronic Application-
Sandeep Mahajan, M. V. Rokade, S. T. Ali, N. R. Munirathnam, S. Deb, D. V. Sridhararao, M. Vijayakumar and A. K. Garg;
25th MRSI Conference held at IISC Bangalore during 12-14 Feb, 2014.

